Bandgap engineering of rippled MoS₂ monolayer under external electric field Academic Article

abstract

• In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning.

authors

• Qian, Xiaofeng

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Qi, J., Li, X., Qian, X., & Feng, J. i.

citation count

• 105

complete list of authors

• Qi, Jingshan||Li, Xiao||Qian, Xiaofeng||Feng, Ji

publication date

• April 2013

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• 40 Engineering
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1063/1.4803803

start page

• 173112

volume

• 102

issue

• 17

URL

• http://dx.doi.org/10.1063/1.4803803