Bandgap engineering of rippled MoS2 monolayer under external electric field
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In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning. © 2013 AIP Publishing LLC.
author list (cited authors)
Qi, J., Li, X., Qian, X., & Feng, J. i.