Electronic structure of the thermoelectric materialsBi2Te3andSb2Te3from first-principles calculations Academic Article uri icon

abstract

  • The electronic structures of Bi2 Te3 and Sb2 Te3 crystals were calculated using the first-principles full-potential linearized augmented plane-wave method. We studied not only the unrelaxed crystals, which have the experimental lattice parameters and scaled atom coordinates, but also the relaxed crystals, which have the lattice parameters and scaled atom coordinates determined from theoretical structure optimizations. We found that Bi2 Te3 has six highest valence-band edges and six lowest conduction-band edges regardless of relaxations. However, by varying structural parameters Sb2 Te3 may undergo an electronic topological transition that the number of valence (and conduction) band edges changes between 6 and 12. Moreover, we presented the location of the band edges and the effective mass tenor parameters for electrons and holes associated with those band edges. Furthermore, we discussed the relation of the calculated electronic structures of the two crystals with the electrical properties of Bi2 Te3 Sb2 Te3 superlattices. 2007 The American Physical Society.

published proceedings

  • Physical Review B

author list (cited authors)

  • Wang, G., & Cagin, T.

publication date

  • January 1, 2007 11:11 AM