Analysis of strain fields in silicon nanocrystals Academic Article

abstract

• Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 23 distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

authors

• Cagin, Tahir

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 1

author list (cited authors)

• Yilmaz, D. E., Bulutay, C., & Cagin, T.

citation count

• 21

complete list of authors

• Yilmaz, Duendar E||Bulutay, Ceyhun||Cagin, Tahir

publication date

• May 2009

publisher

• AIP Publishing  Publisher

keywords

• Bond Lengths
• Elemental Semiconductors
• Internal Stresses
• Nanostructured Materials
• Silicon

Digital Object Identifier (DOI)

• 10.1063/1.3138163

start page

• 191914

volume

• 94

issue

• 19

URL

• http://dx.doi.org/10.1063/1.3138163