publication venue for
- Electrode-material dependent switching in TaOx memristors. 29:104003-104003. 2014
- A replacement of high-k process for CMOS transistor by atomic layer deposition. 28:082003-082003. 2013
- Self-nucleation and growth of group III-antimonide nanowires. 25:024014-024014. 2010
- Characterization of electrodeposited Zn1-xHgxSe thin films. 20:749-754. 2005
- Effect of long-term He-Ne laser light exposure and subsequent annealing on hydrogenated amorphous silicon pin photodiodes. 20:1005-1009. 2005
- Influence of the roughness of molybdenum back electrode on the photodiode characteristics under He-Ne illumination. 18:788-793. 2003
- Structural characterization of hot wall deposited cadmium selenide thin films. 13:1016-1024. 1998
- Biased percolation and electrical breakdown. 12:1057-1063. 1997
- Biased percolation and abrupt failure of electronic devices. 11:1770-1775. 1996